1 publication date: december 2003 sjj00260bed composite transistors XN01457 silicon pnp epitaxial planar type for general amplification features ? two elements incorporated into one package (emitter-coupled transistors) ? reduction of the mounting area and assembly cost by one half basic part number ? 2sb1693 2 absolute maximum ratings t a = 25 c unit: mm internal connection marking symbol: 4y electrical characteristics t a = 25 c 3 c 2.90 1.9 0.1 0.16 +0.10 ?0.06 2.8 +0.2 ?0.3 1.1 +0.3 ?0.1 1.1 0 to 0.1 +0.2 ?0.1 1.50 (0.65) 0.4 0.2 +0.25 ?0.05 (0.95) (0.95) 0.30 +0.10 ?0.05 5 4 3 1 2 +0.20 ?0.05 5? 10? 2 tr1 tr2 4 1 5 3 parameter symbol rating unit collector-base voltage (emitter open) v cbo ? 40 v collector-emitter voltage (base open) v ceo ? 20 v emitter-base voltage (collector open) v ebo ? 15 v collector current i c ? 0.5 a peak collector current i cp ? 1a total power dissipation p t 300 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 1: collector (tr1) 4: emitter 2: collector (tr2) 5: base (tr1) 3: base (tr2) eiaj: sc-74a mini5-g1 package note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * 1: pulse measurement * 2: ratio between 2 elements parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 10 a, i e = 0 ? 40 v collector-emitter voltage (base open) v ceo i c = ? 2 ma, i b = 0 ? 20 v emitter -base voltage (collector open) v ebo i e = ? 10 a, i c = 0 ? 15 v forward current transfer ratio * 1 h fe1 v ce = ? 2 v, i c = ? 100 ma 160 560 ? h fe2 v ce = ? 2 v, i c = ? 500 ma 100 h fe ratio * 1, 2 h fe(small v ce = ? 2 v, i c = ? 100 ma 0.50 0.99 ? /large) collector-emitter saturation voltage * 1 v ce(sat) i c = ? 100 ma, i b = ? 10 ma ? 60 ? 300 mv i c = ? 0.5 a, i b = ? 25 ma ? 210 ? 500 transition frequency f t v cb = ? 5 v, i e = 50 ma, f = 200 mhz 170 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 16 pf (common base, input open circuited)
XN01457 2 sjj00260bed i c ? v be v ce(sat) ? i c h fe ? i c p t ? t a i c ? v ce i c ? i b c ob ? v cb 0 160 40 120 80 0 300 200 100 total power dissipation p t ( mw ) ambient temperature t a ( c ) 0 ? 12 ? 10 ? 8 ? 2 ? 6 ? 4 0 ? 400 ? 300 ? 100 ? 200 t a = 25 c i b = ? 1.0 ma ? 0. 9 ma ? 0. 8 ma ? 0. 7 ma ? 0. 6 ma ? 0. 5 ma ? 0. 4 ma ? 0. 3 ma ? 0. 2 ma ? 0. 1 ma collector-emitter voltage v ce ( v ) collector current i c ( ma ) 0 ? 1.2 ? 1.0 ? 0.8 ? 0.2 ? 0.6 ? 0.4 0 ? 300 ? 200 ? 100 v ce = ? 2 v base current i b ( ma ) collector current i c ( ma ) 0 ? 0.8 ? 1.2 ? 0.4 0 ? 120 ? 80 ? 40 v ce = ? 2 v t a = 75 c 25 c ? 25 c base-emitter voltage v be ( v ) collector current i c ( ma ) ? 1 ? 10 ? 100 ? 10 ? 3 ? 10 ? 1 ? 10 ? 2 t a = 75 c 25 c ? 25 c i c / i b = 10 collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) ? 1 ? 10 ? 100 0 400 300 200 100 t a = 75 c 25 c ? 25 c v ce = ? 2 v forward current transfer ratio h fe collector current i c ( ma ) 0 ? 40 ? 10 ? 30 ? 20 1 100 10 f = 1 mhz t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v)
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